{"id":16379,"date":"2025-05-19T18:00:38","date_gmt":"2025-05-19T10:00:38","guid":{"rendered":"https:\/\/www.topdiodes.com\/?p=16379"},"modified":"2025-05-19T22:50:01","modified_gmt":"2025-05-19T14:50:01","slug":"sic-vs-gan-semiconductor","status":"publish","type":"post","link":"https:\/\/www.topdiodes.com\/sic-vs-gan-semiconductor\/","title":{"rendered":"SiC VS GaN semiconductor"},"content":{"rendered":"

SiC VS GaN semiconductor<\/h1>\n\n

With the rapid development of high-tech industries such as new energy, electric vehicles, 5G communications, and data centers, traditional silicon materials are gradually encountering bottlenecks. Third-generation semiconductor materials\u2014silicon carbide (SiC) and gallium nitride (GaN)\u2014are becoming the focus. With their higher voltage tolerance, lower energy consumption, and superior thermal performance, they are regarded as the core materials for this generation of power devices and RF devices.<\/p>\n

\"SiC<\/strong><\/p>\n

What Are Third-Generation Semiconductors<\/h2>\n

Semiconductor materials can be broadly categorized into three generations based on their bandgap:<\/p>\n

First Generation<\/strong>: Silicon (Si) and germanium (Ge), dominating traditional ICs, microprocessors, and circuits.<\/p>\n

Second Generation<\/strong>: Gallium arsenide (GaAs) and indium phosphide (InP), mainly used in RF and optical communications.<\/p>\n

Third Generation<\/strong>: Silicon carbide (SiC) and gallium nitride (GaN), which are wide-bandgap semiconductors.<\/p>\n

Compared to silicon, SiC and GaN have larger bandgaps, higher breakdown voltages, faster switching speeds, and lower on-resistance, making them particularly suitable for high-frequency, high-voltage, and high-temperature environments. They are ideal materials for power electronics and RF communications.<\/p>\n

 <\/p>\n

Key Comparisons<\/h2>\n

Performance<\/strong><\/p>\n

Silicon Carbide (SiC)<\/strong>: Breakdown electric field strength of 2.8 MV\/cm, suitable for high-voltage scenarios above 1200V. It also has high thermal conductivity and outstanding high-temperature resistance. However, its substrate growth requires a high-temperature process of 2700\u00b0C, resulting in higher costs.<\/p>\n

Gallium Nitride (GaN)<\/strong>: Breakdown electric field strength of 3.3 MV\/cm, switching frequencies reaching MHz levels, and lower power loss.<\/p>\n

 <\/p>\n

Cost<\/h2>\n

SiC substrates are expensive, but their compatibility with silicon-based TO-247 packaging allows for rapid replacement of traditional IGBTs.<\/p>\n

GaN reduces costs by using silicon-based substrates, with 8-inch wafer production lowering single-device costs by 30%.<\/p>\n

SiC is focusing on expanding 8-inch wafer production, while GaN is advancing vertical structures and monolithic integration technologies to break through the 1200V voltage barrier.<\/p>\n

 <\/p>\n

Applications<\/h2>\n

SiC<\/strong> Primarily is used in EV traction inverters, industrial power supplies, photovoltaic inverters, and power grid transmission\/distribution systems.<\/p>\n

GaN<\/strong> Mainly applies in consumer electronics, 5G RF power amplifiers, radar systems, and high-frequency communications.<\/p>\n

 <\/p>\n

Topdiode SiC MOSFET<\/h2>\n

Topdiode already supply SiC MOSFET cross to On Semi, ST, Infineon,etc.<\/p>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
NO<\/strong><\/td>\nDescription<\/strong><\/td>\nIFSM(A)<\/strong><\/td>\nIF(AV)<\/strong><\/td>\nVds<\/strong><\/td>\nVF(typ.)<\/strong><\/td>\nQC(typ.)<\/strong><\/td>\nPackage<\/strong><\/td>\ncross to<\/strong><\/td>\nPN<\/strong><\/td>\n<\/tr>\n
TPDA10S65C1P<\/td>\nSIC SBD<\/td>\n65A<\/td>\n10A@158\u2103<\/td>\n650V<\/td>\n1.36V<\/td>\n25nC<\/td>\nTO-220-2<\/td>\nInfineon<\/td>\nIDH10SG60C<\/td>\n<\/tr>\n
ST<\/td>\nSTPSC10065D<\/td>\n<\/tr>\n
On Semi<\/td>\nFFSP1065A<\/td>\n<\/tr>\n
TPDA15S65C1P<\/td>\nSIC SBD<\/td>\n100A<\/td>\n15A@155\u2103<\/td>\n650V<\/td>\n1.38V<\/td>\n41nC<\/td>\nTO-220-2<\/td>\nInfineon<\/td>\nIDH16G65C6<\/td>\n<\/tr>\n
Littlelfuse<\/td>\nLSIC2SD065A16A<\/td>\n<\/tr>\n
On Semi<\/td>\nFFSP1665A<\/td>\n<\/tr>\n
TPDB20A65C1P<\/td>\nSIC SBD<\/td>\n65A<\/td>\n20A@158\u2103<\/td>\n650V<\/td>\n1.36V<\/td>\n25nC<\/td>\nTO-220-3<\/td>\nFUJI<\/td>\nFDCP20C65<\/td>\n<\/tr>\n
On Semi<\/td>\nFFSP2065BDN-F085<\/td>\n<\/tr>\n
TPDD20A120C1P<\/td>\nSIC SBD<\/td>\n100A<\/td>\n20A@164\u2103<\/td>\n1200V<\/td>\n1.34V<\/td>\n61.4nC<\/td>\nTO-247-3<\/td>\nInfineon<\/td>\nIDW20G120C5B<\/td>\n<\/tr>\n
On Semi<\/td>\nFFSH20120ADN-F155<\/td>\n<\/tr>\n
ST<\/td>\nSTPSC20H12C<\/td>\n<\/tr>\n
TPDD20A65C1P<\/td>\nSIC SBD<\/td>\n65A<\/td>\n20A@155\u2103<\/td>\n650V<\/td>\n1.36V<\/td>\n25nC<\/td>\nTO-247-3<\/td>\nInfineon<\/td>\nIDW20G65C5B<\/td>\n<\/tr>\n
On Semi<\/td>\nFFSH2065ADN-F155<\/td>\n<\/tr>\n
Littlefuse<\/td>\nLFUSCD20065B<\/td>\n<\/tr>\n
TPDD30A65C1P<\/td>\nSIC SBD<\/td>\n100A<\/td>\n30A@155\u2103<\/td>\n650V<\/td>\n1.36V<\/td>\n41nC<\/td>\nTO-247-3<\/td>\nOn Semi<\/strong><\/td>\nFFSH3065ADN-F155<\/strong><\/td>\n<\/tr>\n
Infineon<\/strong><\/td>\nIDW32G65C5B<\/strong><\/td>\n<\/tr>\n
TPDD40A120C1P<\/td>\nSIC SBD<\/td>\n190A<\/td>\n40A@155\u2103<\/td>\n1200V<\/td>\n1.33V<\/td>\n131nC<\/td>\nTO-247-3<\/td>\nOn Semi<\/td>\nFFSH40120ADN-F155<\/td>\n<\/tr>\n
ST<\/td>\nSTPSC40H12C<\/td>\n<\/tr>\n
Infineon<\/td>\nIDW40G120C5B<\/td>\n<\/tr>\n
TPDG10S65C1P<\/td>\nSIC SBD<\/td>\n65A<\/td>\n10A@148\u2103<\/td>\n650V<\/td>\n1.36V<\/td>\n25nC<\/td>\nTO-252<\/td>\nInfineon<\/td>\nIDK10G65C5<\/a><\/td>\n<\/tr>\n
On Semi<\/td>\nFFSD1065B<\/td>\n<\/tr>\n
ST<\/td>\nSTPSC10H065G-TR<\/td>\n<\/tr>\n
TPDG15S65C1P<\/td>\nSIC SBD<\/td>\n100A<\/td>\n15A@149\u2103<\/td>\n650V<\/td>\n1.36V<\/td>\n41nC<\/td>\nTO-263<\/td>\nInfineon<\/td>\nAIDK16S65C5<\/td>\n<\/tr>\n
TPDG20A65C1P<\/td>\nSIC SBD<\/td>\n65A<\/td>\n20A@148\u2103<\/td>\n650V<\/td>\n1.36V<\/td>\n25nC<\/td>\nTO-263<\/td>\nOn Semi<\/td>\nFFSB2065BDN-F085<\/td>\n<\/tr>\n
TPDG5S65C1P<\/td>\nSIC SBD<\/td>\n33A<\/td>\n5A@157\u2103<\/td>\n650V<\/td>\n1.40V<\/td>\n16.2nC<\/td>\nTO-263<\/td>\nInfineon<\/td>\nIDK05G65C5<\/td>\n<\/tr>\n
ST<\/td>\nSTPSC6H065G-TR<\/td>\n<\/tr>\n
On Semi<\/td>\nFFSB0665A<\/td>\n<\/tr>\n
TPDH10S120C1P<\/td>\nSIC SBD<\/td>\n100A<\/td>\n10A@164\u2103<\/td>\n1200V<\/td>\n1.34V<\/td>\n61.4nC<\/td>\nTO-247-2<\/td>\nOn Semi<\/td>\nFFSH10120A<\/td>\n<\/tr>\n
ST<\/td>\nSTPSC10H12WL<\/td>\n<\/tr>\n
Infineon<\/td>\nIDWD10G120C5<\/td>\n<\/tr>\n
TPDH10S150C1P<\/td>\nSIC SBD<\/td>\n80A<\/td>\n10A@155\u2103<\/td>\n1500V<\/td>\n1.50V<\/td>\n80nC<\/td>\nTO-247-2<\/td>\nOn Semi<\/td>\nFFSH10120A<\/td>\n<\/tr>\n
ST<\/td>\nSTPSC10H12WL<\/td>\n<\/tr>\n
Infineon<\/td>\nIDWD10G120C5<\/td>\n<\/tr>\n
TPDH10S170C1P<\/td>\nSIC SBD<\/td>\n85A<\/td>\n10A@158\u2103<\/td>\n1700V<\/td>\n1.45V<\/td>\n88.4nC<\/td>\nTO-247-2<\/td>\nLittlefuse<\/td>\nLSIC2SD170B10<\/td>\n<\/tr>\n
On Semi<\/td>\nNDSH10170A<\/td>\n<\/tr>\n
TPDH20S120C1P<\/td>\nSIC SBD<\/td>\n190A<\/td>\n20A@159\u2103<\/td>\n1200V<\/td>\n1.33V<\/td>\n131nC<\/td>\nTO-247-2<\/td>\nST<\/td>\nSTPSC20H12WL<\/td>\n<\/tr>\n
On Semi<\/td>\nFFSH20120A-F085<\/td>\n<\/tr>\n
Infineon<\/td>\nIDWD20G120C5<\/td>\n<\/tr>\n
TPDH40S120C1P<\/td>\nSIC SBD<\/td>\n250A<\/td>\n40A@143\u2103<\/td>\n1200V<\/td>\n1.50V<\/td>\n190nC<\/td>\nTO-247-2<\/td>\nOn Semi<\/td>\nNDSH40120C-F155<\/td>\n<\/tr>\n
Infineon<\/td>\nIDWD40G120C5<\/td>\n<\/tr>\n
TPDH40S65C1P<\/td>\nSIC SBD<\/td>\n230A<\/td>\n40A@153\u2103<\/td>\n650V<\/td>\n1.46V<\/td>\n99nC<\/td>\nTO-247-2<\/td>\nOn Semi<\/td>\nFFSH4065A<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

 <\/p>\n

Market Landscape<\/h2>\n

In 2023, the global SiC power device market was valued at approximately 2 billion and is projected to reach 2 billion and is projected to reach 6.5 billion by 2028, with a compound annual growth rate (CAGR) exceeding 25%. Meanwhile, the GaN power device market was around 370 million in 2023 and is expected to grow to about 370 million in 2023 and is expected to grow to about 2 billion by 2028, demonstrating rapid expansion, particularly in consumer electronics and communications.<\/p>\n

 <\/p>\n

Fourth-generation semiconductor materials primarily include ultra-wide bandgap semiconductors such as gallium oxide (Ga\u2082O\u2083), diamond, and aluminum nitride (AlN), as well as ultra-narrow bandgap semiconductors like gallium antimonide (GaSb) and indium antimonide (InSb).<\/p>\n

If you are looking for SiC MOSFET, please contact\uff1aluna@topdiode.com<\/p>\n","protected":false},"excerpt":{"rendered":"

SiC VS GaN semiconductor With the rapid development of high-tech industries such as new energy, electric vehicles, 5G communications, and data centers, traditional silicon materials are gradually encountering bottlenecks. Third-generation semiconductor materials\u2014silicon carbide (SiC) and […]<\/p>\n","protected":false},"author":1,"featured_media":16380,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"disabled","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"categories":[1],"tags":[],"class_list":["post-16379","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news"],"acf":[],"_links":{"self":[{"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/posts\/16379","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/comments?post=16379"}],"version-history":[{"count":6,"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/posts\/16379\/revisions"}],"predecessor-version":[{"id":16386,"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/posts\/16379\/revisions\/16386"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/media\/16380"}],"wp:attachment":[{"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/media?parent=16379"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/categories?post=16379"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.topdiodes.com\/wp-json\/wp\/v2\/tags?post=16379"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}