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Let us begin by reviewing the power and frequency ranges covered by the principal power transistors of recent years, which are Si-MOSFETs, IGBTs, and SiC-MOSFETs. Hereafter we will be focusing on super-junction MOSFETs, but it will be useful to understand the position of Si-MOSFETs in the market in order to be able to understand how they are used selectively according to their features and characteristics.<\/p>\n
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The following graphic illustrates the power and frequency regions that can be handled by the different types of power transistors. We see that Si-MOSFETs lag behind IGBTs and SiC-MOSFETs somewhat with respect to ON-resistance and rated voltage, but are well-suited to high-speed operation at lower to intermediate power levels.<\/p>\n
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Si-MOSFETs can be classified as planar MOSFETs and super-junction MOSFETs according to the manufacturing processes used. Put simply, in the field of power transistors, the super-junction structure was developed in order to transcend the limits of planar structures.<\/p>\n
As indicated in the graphic below, a planar structure constitutes a flat or planar transistor. This structure has had the drawback that if the rated voltage is raised, the drift layer becomes thicker, and so the ON-resistance is increased. In contrast, a super-junction structure is a structure in which multiple vertical pn junctions are arranged, as a result of which a low ON-resistance RDS(ON) and reduced gate charge Qg are realized while maintaining a high voltage.<\/p>\n
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In addition, the reverse current irr and the reverse recovery time trr of the internal diode are parameters that need to be studied for the turn-off switching characteristics of a transistor. As indicated in the waveform diagram below, in essence a super-junction MOSFET has a larger pn junction area than a planar MOSFET, and so trr is faster than for a planar MOSFET, but a larger irr flows.<\/p>\n
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This characteristic, one issue with super-junction MOSFETs, is steadily undergoing improvement, and such features as fast operation and low noise endow super-junction MOSFETs with considerable variety. In the following sections, we will review features for a variety of MOSFETs.<\/p>\n
Topdiode IGBTs (Insulated Gate Bipolar Transistors) contribute to improved efficiency and energy savings in a variety of high voltage\/current applications. Commonly used as switches in electronic devices, IGBTs are characterized by three terminals and metal oxide semiconductor gate structure.<\/p>\n
Combining fast, smooth switching capabilities with high efficiency that saves energy while maintaining performance in everything from electric vehicles (EVs), trains, AC, and portable welding machines to AC-DC inverters and switching power supplies.<\/p>\n
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